Categories | Infrared Emitting Diode |
---|---|
Brand Name: | Double Light |
Model Number: | DL-M15B8 |
Certification: | ISO9001:2008,Rosh |
Place of Origin: | China |
MOQ: | 1000 PCS |
Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
Supply Ability: | 15,000,000pcs per Day |
Delivery Time: | 5-7 working days after received your payment |
Packaging Details: | Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms |
Power Dissipation: | 50MW |
Supply Voltage: | 3-5V |
Collector-Emitter Voltage: | 30V |
Emitter-Collector-Voltage: | 5V |
Power Supply Voltage: | 2.7-5.5V |
Dissipation Current: | 1.0-1.5ma |
Peak Wavelength: | 940nm |
Reception Distance: | 15 m |
Features:
Descriptions:
Applications:
Part No. | Material | Color | Source Color | |
DL-M15B8 | Chip | Silicon | --- | Infrared Receiver |
Lead Frame | SPCC | Silver White | --- | |
Compound | Epoxy | Black | --- |
Absolute Maximum Ratings at Ta=25℃
Parameters | Symbol | Value | Unit | Condition |
Power Dissipation | PD | 50 | mW | Ta≤85℃ |
Supply Voltage | VCC | -0.3 ~ +6.0 | V | Pin1 |
Operating Current | IC | 3.00 | mA | Pin1 |
Collector-Emitter Voltage | VCEO | 30 | V | |
Emitter-Collector-Voltage | VECO | 5 | V | |
Operating Temperature | TOPR | -40 ~ +85 | ℃ | |
Storage Temperature | TSTG | -40 ~ +100 | ℃ | |
Soldering Temperature [4mm (.157″) from mold body] | TSOL | 260 | ℃ | t≤5s |
Electrical Optical Characteristics at (Ta=25℃, Vcc=5V, f0=38KHz)
Parameters | Symbol | Min. | Type | Max. | Unit | Condition | |
Power Supply Voltage | VCC | 2.70 | 5.00 | 5.50 | V | ||
Dissipation Current | ICC | --- | 1.00 | 1.50 | mA | VCC=5V, Ev=0 | |
Static State Current | ICE | --- | --- | 0.50 | mA | No Signal Input | |
Collector Dark Current | ICEO | --- | --- | 100 | nA | VCE=20V, Ee=0mW/cm2 | |
Reception Angle * | 2θ1/2 | --- | 90 | --- | Deg | ||
Peak Wavelength | λp | --- | 940 | --- | nm | ||
Modulated Frequency | f0 | --- | 38 | --- | KHz | ||
Max. Voltage Gain | Av | 75 | 80 | 85 | dB | FIN=37.9kHz VIN=30μV p-p KHz | |
BPF Bandwidth | fBW | f0-1.5 | f0 | f0+1.5 | KHz | -3Db Bandwidth | |
Reception Distance | L0 | 12 | --- | --- | m | 0° | VCC=5V, At the ray axis (Note 1) |
L1 | 9 | --- | --- | m | 30° | ||
L2 | 6 | --- | --- | m | 45° | ||
Low Level Output Voltage | VOL | --- | --- | 0.50 | V | Ev=0.5mw/m2 (Cycle=1.2ms) (Duty=50%) | |
High Level Output Voltage | VOH | 4.50 | --- | --- | V | ||
Low Output Pulse Width | TPWL | 400 | 600 | 800 | μs | VIN=50mVp-p | |
High Output Pulse Width | TPWH | 400 | 600 | 800 | μs | VIN=50mVp-p |
Notes:
1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.
2. A range from 30cm to the arrival distance. Average value of 50 pulses.
Infrared LED Emitting Diodes Package Dimension:
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