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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDA18N50 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 500 V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 265mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 10 V |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 265mOhm @ 9.5A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 239W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-3PN | |
Package / Case |
Product Listing:
FDA18N50 – ON Semiconductor MOSFET Power Electronics
Features:
• Maximum Drain-Source Voltage (VDS): 500V
• Maximum Gate-Source Voltage (VGSS): ±20V
• Maximum Drain Current (ID): 18A
• Maximum Power Dissipation (PD): 86W
• RDS(on) (Max) @ VGS = 10V: 0.105Ω
• Operating Junction and Storage Temperature Range: -55°C to 175°C
• Configuration: Single
• Mounting Type: Through Hole
• Package / Case: TO-220
• Supplier Device Package: TO-220F
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