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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDP045N10A-F102 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1 - 3 days |
| Packaging Details: | standard |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Mounting Type: | Through Hole |
| Vgs (Max): | ±20V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 263W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-220-3 | |
| Package / Case |
FDP045N10A-F102 is a high-voltage, high-speed power MOSFET transistor in a TO-220-3 package. This device is designed for switching applications in switching power supplies, motor control, and other power switching applications. It has a drain-source voltage rating of 100V, a maximum drain current of 45A, and a maximum power dissipation of 75W.
It offers a fast switching speed of 10ns, a low gate-source capacitance of 6.5pF, and a low on-resistance of 0.0045ohm. This device is designed for low gate-charge and reverse body diode protection to enhance the switching performance. It is RoHS compliant, making it an ideal choice for power electronics applications.
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