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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDP032N08B-F102 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1 - 3 days |
| Packaging Details: | standard |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80V |
| Mounting Type: | Surface Mount |
| Vgs (Max): | ±20V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 10965 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 263W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-220-3 | |
| Package / Case |
The FDP032N08B-F102 is a N-Channel Power MOSFET from Infineon Technologies. It is designed for use in DC/DC converters, motor control, and other power management applications. This device is available in a TO-220-3 package with three leads. This MOSFET is built using an advanced high-voltage technology.
It operates with a drain-source voltage (VDS) of 80V, an on-state resistance (RDS(on)) of 0.028Ω, and an Id of 82A. It offers a maximum drain current of 82A and a maximum drain-source on-state resistance of 0.028Ω. This MOSFET offers fast switching capabilities and superior avalanche ruggedness. It also provides improved thermal resistance, resulting in improved system efficiency. The FDP032N08B-F102 is RoHS compliant and halogen-free.
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