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Categories | MOSFET Power Electronics |
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Brand Name: | onsemi |
Model Number: | NTD4858NT4G |
Place of Origin: | original |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 999999 |
Delivery Time: | 1-3 days |
Packaging Details: | standard |
Drain to Source Voltage (Vdss): | 25 V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta), 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19.2 nC @ 4.5 V |
NTD4858NT4G TO-252-3 MOSFET Power Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V, 73 A
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | DPAK | |
Package / Case |
Product Listing: ON Semiconductor NTD4858NT4G MOSFET Power Electronics, TO-252-3 Package
Parameters:
• Maximum Drain Source Voltage: 100V
• Maximum Gate Source Voltage: ±20V
• Maximum Continuous Drain Current: 4A
• Maximum Power Dissipation: 8W
• RDS(on): 0.065ohm
• Maximum Operating Temperature: 175°C
• Mounting Type: Through Hole
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