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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | NTR4170NT1G |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1 - 3 days |
| Packaging Details: | standard |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Mounting Type: | Surface Mount |
| Vgs (Max): | ±12V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3.2A, 10V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.76 nC @ 4.5 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 432 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 480mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case |
The NTR4170NT1G is a P-channel enhancement mode Field-Effect Transistor (FET) designed for high-efficiency discrete and integrated load switching and low-side power management applications. It is housed in a compact TO-236-3 surface mount package with an industry standard pinout, allowing for easy drop-in replacement in existing designs.
The device utilizes a vertical DMOS structure with a high cell density for optimum performance and low on-resistance. It offers a low gate-charge and fast switching speeds for excellent circuit efficiency. The NTR4170NT1G is designed to operate with a wide range of gate drive voltages and is ideally suited for switching applications up to 30V. The device is RoHS compliant and 100% lead (Pb) free.
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