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General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc Dc Converters

Name: General Purpose Transistor IXTH200N10T 200A 100V 54 Rds 550W Dc Dc Converters
Brand: IXYS
Price: 1 USD

General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc Dc Converters

Categories	IGBT Power Transistor
Brand Name:	IXYS
Model Number:	IXTH200N10T
Place of Origin:	Original Factory
MOQ:	2pcs
Price:	Negotiate
Payment Terms:	T/T, Western Union, MoneyGram, PayPay
Supply Ability:	7000pcs Per Month
Delivery Time:	2-4work days
Packaging Details:	450Pcs
Type:	MOSFET Transistors
Description:	MOSFET 200 Amps 100V 5.4 Rds
Shipping by:	DHL\UPS\Fedex
Lead time:	2-3Working days
Power - Max:	550W
Rise Time:	31 ns

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Company Info.

Shenzhen Retechip Electronics Co., Ltd

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General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters

Description

Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications,

requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with

wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates

for automobile applications and other similar demanding applications in harsh environments.

Features

• IXYS advanced low Qg process

• Low gate charge and capacitances - easier to drive - faster switching

• International standard packages

• Low RDS (on)

• Rated for unclamped Inductive load switching (UIS) rated

• Molding epoxies meet UL 94 V-0 flammability classification

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers z AC motor control

• Temperature and lighting controls

Specifications

Product Attribute	Attribute Value

Product Category:	MOSFET
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Channel Mode:	Enhancement
Tradename:	HiPerFET
Series:	IXTH200N10
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	34 ns
Height:	21.46 mm
Length:	16.26 mm

Shopping Guide

Shipping	Delivery period	For in-stock parts, orders are estimated to ship out in 3 days. Once shipped, estimated delivery time depends on the below carriers you chose: DHL Express, 3-7 business days. DHL eCommerce,12-22 business days. FedEx International Priority, 3-7 business days EMS, 10-15 business days. Registered Air Mail, 15-30 business days.
	Shipping rates	After confirming the order, we will evaluate the shipping cost based on the weight of the goods
	Shipping option	We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
	Shipping tracking	We will notify you by email with tracking number once order is shipped.
Returning warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Returning warranty	Warranty	All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering	Payment	T/T,PayPal, Credit Card includes Visa, Master, American Express.

Product Tags:

General Purpose Transistor IXTH200N10T

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