OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor

OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor

High Voltage Mosfet Transistor Description:

The AP10H03DF is the highest performance trench
N-ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the small power switching and
load switch applications. The meet the RoHS and
Product requirement with full function reliability approved.

High Voltage Mosfet Transistor Features

VDS = 30V ID = 10A
RDS(ON) < 12mΩ @ VGS=4.5V
RDS(ON) < 16.5mΩ @ VGS=2.5V

Package Marking and Ordering Information

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A

4.The power dissipation is limited by 175℃ junction temperature

5. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

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