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| Categories | Flash Memory IC Chip |
|---|---|
| Brand Name: | Ti |
| Model Number: | CSD17313Q2 |
| MOQ: | Contact us |
| Price: | Contact us |
| Payment Terms: | Paypal, Western Union, TT |
| Supply Ability: | 50000 Pieces per Day |
| Delivery Time: | The goods will be shipped within 3 days once received fund |
| Packaging Details: | SON6 |
| Description: | MOSFET N-CH 30V 5A 6WSON |
| Id - Continuous Drain Current: | 5 A |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vgs - Gate-Source Voltage: | 8 V |
| Qg - Gate Charge: | 2.1 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET
1 Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen-Free
SON 2-mm × 2-mm Plastic Package
2 Applications
DC-DC Converters
Battery and Load Management Applications
3 Description
This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
Product Summary
(1) For all available packages, see the orderable addendum at the end of the data sheet.
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 2.1 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.4 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 31 | mΩ |
VGS = 4.5 V | 26 | mΩ | ||
VGS = 8 V | 24 | mΩ | ||
VGS(th) | Threshold Voltage | 1.3 | V | |
Ordering Information
PART NUMBER | QTY | MEDIA | PACKAGE | SHIP |
CSD17313Q2 | 3000 | 13-Inch Reel | SON 2-mm × 2-mm Plastic Package | Tape and Reel |
CSD17313Q2T | 250 | 7-Inch Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current (package limited) | 5 | A |
Continuous Drain Current (silicon limited), TC = 25°C | 19 | ||
Continuous Drain Current(1) | 7.3 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 57 | A |
PD | Power Dissipation(1) | 2.4 | W |
Power Dissipation, TC = 25°C | 17 | ||
TJ, TSTG | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse, ID =19A,L=0.1mH,RG =25Ω | 18 | mJ |
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