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| Categories | Flash Memory IC Chip |
|---|---|
| Brand Name: | Ti |
| Model Number: | CSD18534Q5A |
| MOQ: | Contact us |
| Price: | Contact us |
| Payment Terms: | Paypal, Western Union, TT |
| Supply Ability: | 50000 Pieces per Day |
| Delivery Time: | The goods will be shipped within 3 days once received fund |
| Packaging Details: | VSONP8 |
| Description: | MOSFET N-CH 60V 13A/50A 8VSON |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Cut Tape |
| Brand: | Texas Instruments |
CSD18534Q5A Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET
1 Features
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package
2 Applications
DC-DC Conversion
Secondary Side Synchronous Rectifier
Isolated Converter Primary Side Switch
Motor Control
3 Description
This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-source voltage | 60 | V | |
Qg | Gate charge total (10 V) | 17 | nC | |
Qgd | Gate charge gate-to-drain | 3.5 | nC | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V | 9.9 | mΩ |
VGS =10V | 7.8 | mΩ | ||
VGS(th) | Threshold voltage | 1.9 | V | |
Ordering Information
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
CSD18534Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18534Q5AT | 250 | 7-Inch Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-source voltage | 60 | V |
VGS | Gate-to-source voltage | ±20 | V |
ID | Continuous drain current (package limited) | 50 | A |
Continuous drain current (silicon limited), TC = 25°C | 69 | ||
Continuous drain current, TA = 25°C(1) | 13 | ||
IDM | Pulsed drain current, TA = 25°C(2) | 229 | A |
PD | Power dissipation(1) | 3.1 | W |
Power dissipation, TC = 25°C | 77 | ||
TJ, Tstg | Operating junction, Storage temperature | –55 to 150 | °C |
EAS | Avalanche energy, single pulse ID =40A,L=0.1mH,RG =25Ω | 80 | mJ |
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