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| Categories | Mosfet Power Transistor |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | OTOMO |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | 8H02ETS |
| Product name: | Mosfet Power Transistor |
| VDSS: | 6.0 A |
| APPLICATION: | Power Management |
| FEATURE: | Low Gate Charge |
| Power mosfet transistor: | SOT-23-6L Plastic-Encapsulate |
| Company Info. |
| Beijing Silk Road Enterprise Management Services Co.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
20V N+N-Channel Enhancement Mode MOSFET
DESCRIPTION
The 8H02ETSuses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V.
GENERAL FEATURES
VDS = 20V,ID = 7A
8H02TS RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4V
RDS(ON) < 20mΩ @ VGS=4.5V
ESD Rating:2000V HBM
Application
Battery protection
Load switch Power management
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| 8H02ETS | TSSOP-8 | 8H02ETS WW YYYY | 5000/3000 |
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±12 | V |
| Drain Current-Continuous@ Current-Pulsed (Note 1) | ID | 7 | V |
| Maximum Power Dissipation | PD | 1.5 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
| Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 83 | ℃/W |
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
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