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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: GP4068D
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8700pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Collector-to-Emitter Voltage: 600 V
Continuous Collector Current: 96 A
Pulse Collector Current: 192 A
Maximum Power Dissipation: 330 W
Operating Junction Temperature: -55 to +175°C
Storage Temperature: -55 to +175°C
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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR


IRGP4068DPbF

IRGP4068D-EPbF


INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS


Features

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (ILM)

• Positive VCE (ON) Temperature co-efficient

• Ultra-low VF Hyperfast Diode

• Tight parameter distribution

• Lead Free Package


Benefits

• Device optimized for induction heating and soft switching applications

• High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI


Absolute Maximum Ratings

ParameterMaxUnits
VCESCollector-to-Emitter Voltage600V
IC @ TC = 25°CContinuous Collector Current96A
IC @ TC = 100°CContinuous Collector Current48A
ICMPulse Collector Current192A
ILMClamped Inductive Load Current192A
IF @ TC = 160°CDiode Continous Forward Current8.0A
IFSMDiode Non Repetitive Peak Surge Current @ TJ = 25°C175A
IFMDiode Peak Repetitive Forward Current16A
VGEContinuous Gate-to-Emitter Voltage±20V
Transient Gate-to-Emitter Voltage±30V
PD @ TC = 25°CMaximum Power Dissipation330W
PD @ TC = 100°CMaximum Power Dissipation170W

TJ

TSTG

Operating Junction and Storage Temperature Range-55 to +175°C
Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)°C
Mounting Torque, 6-32 or M3 Screw10 lbf·in (1.1 N·m)


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Quality GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR for sale
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