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| Categories | IGBT Transistor Module |
|---|---|
| Brand Name: | Infineon Technologies |
| Model Number: | IMBG120R350M1HXTMA1 |
| MOQ: | 50pcs |
| Price: | Negotiable |
| Supply Ability: | 1000000pcs |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs: | 468mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id: | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 5.9 nC @ 18 V |
| Vgs (Max): | +18V, -15V |
| Company Info. |
| HongKong Wei Ya Hua Electronic Technology Co.,Limited |
| Verified Supplier |
| View Contact Details |
| Product List |
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
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