| Sign In | Join Free | My hardware-wholesale.com |
|
| Sign In | Join Free | My hardware-wholesale.com |
|
| Categories | Silicon Carbide Wafer |
|---|---|
| Brand Name: | ZMKJ |
| Model Number: | 4H-N |
| Place of Origin: | CHINA |
| MOQ: | 1pcs |
| Price: | by case |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-50pcs/month |
| Delivery Time: | 1-6weeks |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Material: | SiC single crystal 4H-N type |
| Grade: | Dummy/Research/Production |
| Thicnkss: | 0.5MM/10-15mm |
| Suraface: | polished |
| Application: | bearing test |
| Diameter: | 8inch |
| color: | Green |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
Double Side Polish Silicon Carbide Wafer 2-8'' 4H N - Doped SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| 4 inch Conductive SiC Wafer Specification | ||||
| Product | 4H-SiC | |||
| Grade | Grade I | Grade II | Grade III | |
| polycrystalline areas | None permitted | None permitted | <5% | |
| polytype areas | None permitted | ≤20% | 20% ~ 50% | |
| Micropipe Density) | < 5micropipes/cm-2 | < 30micropipes/cm-2 | <100micropipes/cm-2 | |
| Total usable area | >95% | >80% | N/A | |
| Diameter | 100.0 mm +0/-0.5 mm | |||
| Thickness | 500 μm ± 25 μm or Customer Specification | |||
| Dopant | n type: nitrogen | |||
| Primary Flat Orientation) | Perpendicular to <11-20> ± 5.0° | |||
| Primary Flat Length | 32.5 mm ± 2.0 mm | |||
| Secondary Flat Orientation) | 90° CW from Primary flat ± 5.0° | |||
| Secondary Flat Length) | 18.0 mm ± 2.0 mm | |||
| On axis Wafer Orientation) | {0001} ± 0.25° | |||
| Off axis Wafer Orientation | 4.0° toward <11-20> ± 0.5° or Customer Specification | |||
| TTV/BOW/Warp | < 5μm / <10μm /< 20μm | |||
| Resistivity | 0.01~0.03 Ω×cm | |||
| Surface Finish | C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification | Double side polish | ||
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots 8 inch 4H N-Type |
2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer 8 inch 4H Semi-insulating SiC wafer |
SiC Applications
Application areas
1:High frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET
2:Optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100% deposit before delivery.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.
|
Double Side Polish Silicon Carbide Wafer 2-6'' 4H N - Doped SiC Wafers
6Inch Dia153mm 0.5mm monocrystalline SiC Silicon Carbide crystal seed Wafer or ingot
Transparent Un-Doped 4H-SEMI Hardness 9.0 Sic Lens
Customized SIC Silicon Carbide Wafer Single Crystal Window Piece 60 X 10 X 0.5mm
10 x 10 x 0.5mm Silicon Carbide Wafer 4H - N SiC Crystal Chips
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer
Customized Sic Wafer SiC Single Crystal 4H-N Type Double Side Polished Surface
SIC Silicon Carbide Wafer 4H - N Type For MOS Device 8inch Dia200mm
350um Thickness 4h-N 4H-SEMI SIC Silicon Carbide Wafer For Epitaxial
