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Categories | Mosfet Power Transistor |
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Brand Name: | Original brand |
Model Number: | IGT60R070D1ATMA1 |
Certification: | Original |
Place of Origin: | Original |
MOQ: | 2000pcs |
Price: | Negotiation |
Payment Terms: | T/T |
Supply Ability: | 100000pcs |
Delivery Time: | 2-3days |
Packaging Details: | 2000/Reel |
Package: | PG-HSOF-8 |
Technology: | GaN |
Transistor Polarity: | N-Channel |
Channel Pattern: | Enhancement |
Product: | MOSFET 600V CoolGaN Power Transistor |
Pd-Power Dissipation: | 125 W |
Vds-Leakage source breakdown electric shock: | 600V |
Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor
Feature
• Enhancement mode transistor – Normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
Benefits
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI
Categories | Mosfet Power Transistor |
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IGT60R070D1ATMA1 | |
Transistor Polarity | N-Channel |
Channel No. | 1 Channel |
Leakage Source on-resistance | 70 mOhms |
Configure | Single |
Pd-Power Dissipation | 125 W |
Vgs th-Gate Source threshold Voltage | 0.9 V |
Channel Pattern | Enhancement |
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Please send us the Remittance Copy when payments done, so that we can arrange the goods.
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