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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

Categories Mosfet Power Transistor
Brand Name: Original brand
Model Number: IGT60R070D1ATMA1
Certification: Original
Place of Origin: Original
MOQ: 2000pcs
Price: Negotiation
Payment Terms: T/T
Supply Ability: 100000pcs
Delivery Time: 2-3days
Packaging Details: 2000/Reel
Package: PG-HSOF-8
Technology: GaN
Transistor Polarity: N-Channel
Channel Pattern: Enhancement
Product: MOSFET 600V CoolGaN Power Transistor
Pd-Power Dissipation: 125 W
Vds-Leakage source breakdown electric shock: 600V
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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor


Feature

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)


Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI


Categories

Mosfet Power Transistor

IGT60R070D1ATMA1
Transistor PolarityN-Channel
Channel No.1 Channel
Leakage Source on-resistance70 mOhms
ConfigureSingle
Pd-Power Dissipation125 W
Vgs th-Gate Source threshold Voltage0.9 V
Channel PatternEnhancement



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