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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Categories Mosfet Power Transistor
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: 10G03S
Product name: Mosfet Power Transistor
Type: mosfet transistor
Junction temperature:: 150℃
Application: Power switching application
Features: Lead free product is acquired
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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

10G03S 30V N+P-Channel Enhancement Mode MOSFET


Description

The 10G03S uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications


General Features

N-Channel

VDS = 30V,ID =10A

RDS(ON) < 16m Ω@ VGS=10V

P-Channel

VDS = -30V,ID = -9A

RDS(ON) < 37mΩ@ VGS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package


Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply


Package Marking and Ordering Information


Absolute Maximum Ratings (TC=25℃unless otherwise noted)
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)


P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
N-Channel Typical Characteristics
P-Channel Typical Characteristics
Quality 10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor for sale
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