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Sic diamond wire cutting machine Precision guidance Sic crystal rod cutting

Categories Semiconductor Equipment
Brand Name: ZMSH
Model Number: Sic diamond wire cutting machine
Certification: rohs
Place of Origin: CHINA
MOQ: 1
Price: by case
Payment Terms: T/T
Delivery Time: 5-10months
Purpose:: Sic diamond wire cutting machine
Equipment size:: 2500x2300x2500(L x W x H)
Processing material size range:: 4, 6, 8, 10, 12 inches of silicon carbide
Surface roughness:: Ra≤0.3u
Average cutting speed:: 0.3mm/min
Cutting and breaking rate:: ≤1%(except for human reasons, silicon material, line, maintenance and other reasons)
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Sic diamond wire cutting machine Precision guidance Sic crystal rod cutting


Abstract of ZMSH SiC diamond wire cutter


Sic diamond wire cutting machine Precision guidance Sic crystal rod cutting


Silicon carbide cutter is a kind of equipment specially used for cutting silicon carbide (SiC) ingot, mainly used to divide large size silicon carbide ingot into smaller chunks or segments for subsequent processing. Silicon carbide as a kind of high hardness, high wear resistant material, its cutting needs special equipment and technology, silicon carbide cutter is designed for this efficient tool.




Characteristics of SiC diamond wire cutter


· High cutting efficiency: Using diamond cutting wheel or line saw, can quickly cut high hardness silicon carbide ingot.


· High stability: The equipment structure is stable, suitable for long-term continuous work.


· Low pollution: Use coolant to reduce dust and keep the working environment clean.


· Easy operation: Equipped with automatic control system, easy operation and high cutting precision.



Technical specifications


SpecificationDetails
Dimensions (L × W × H)2500x2300x2500 or customize
Processing material size range4, 6, 8, 10, 12 inches of silicon carbide
Surface roughnessRa≤0.3u
Average cutting speed0.3mm/min
Weight5.5t
Cutting process setting steps≤30 steps
Equipment noise≤80 dB
Steel wire tension0~110N(0.25 wire tension is 45N)
Steel wire speed0~30m/S
Total power50kw
Diamond wire diameter≥0.18mm
End flatness≤0.05mm
Cutting and breaking rate≤1%(except for human reasons, silicon material, line, maintenance and other reasons)


Design advantage


1. The two active cutting wheels of the cutting system are driven by motors to cut
High efficiency, good cutting quality;
2. Single machine to achieve multi-specification silicon carbide end processing and circular cutting function;
3. Device operation interface The device is simple and easy to operate;
4. Fully closed external protection, cutting process to avoid dust pollution, low noise.




The effect of SiC diamond wire cutter


The silicon carbide cutter can efficiently and accurately cut large size SiC ingot into standard crystal blocks, the cutting accuracy can reach ±0.1mm, and the section flatness is controlled within 5μm. This high-precision cutting ensures a 15-20% increase in material utilization during subsequent slicing operations, while reducing edge losses during wafer preparation. Using diamond wire saw technology, cutting loss is only 0.3-0.5mm, compared with the traditional cutting method to save more than 20% of raw material costs. The cut wafers can be directly used to prepare 4- to 8-inch SiC wafers to meet the demanding substrate material requirements of power semiconductor devices such as MOSFET and SBD.





ZMSH service


We provide silicon carbide cutting machine sales, leasing and supporting technical services, including equipment selection guidance, process parameter optimization, operator training and after-sales maintenance support, while providing customized cutting solutions according to customer needs.



Q&A​


1. Q: What is the main working principle of silicon carbide induction growth furnace?
A: Silicon carbide induction growth furnace through electromagnetic induction heating or resistance heating, the temperature in the crucible rises to more than 2000 ° C, and forms an axial temperature gradient, thereby promoting the growth of silicon carbide crystals.


2. Q: What are the advantages of silicon carbide induction growth furnace in improving crystal quality?
A: Silicon carbide induction growth furnace has the characteristics of stable temperature field and good process repeatability, which can effectively avoid carbon pollution on the surface of silicon carbide seed crystals, thereby improving the quality and consistency of crystals.




Tag: #Silicon carbide diamond wire cutter, #SIC, #4/6/8/10/12 inch SIC#SIC Ingot, #6/8/12 inch Sic Ingot, #SIC boule, #Sic crystal growth


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