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Infineon Technologies LDMOS FET 65V 2.14GHz 15.8dB Gain Transistor for RF Power Amplification

Categories Discrete Semiconductor Products
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs
Product Status: Obsolete
Mounting Type: Surface Mount
Voltage - Rated: 65 V
Package: Tape & Reel (TR)
Series: -
Noise Figure: -
Supplier Device Package: H-37260-2
Voltage - Test: 30 V
Mfr: Infineon Technologies
Frequency: 2.14GHz
Gain: 15.8dB
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current - Test: 1.6 A
Power - Output: 50W
Technology: LDMOS
Current Rating (Amps): 10µA
Base Product Number: PTFA212001
Description: IC FET RF LDMOS 200W H-37260-2
Stock: In Stock
Shipping Method: LCL, AIR, FCL, Express
Payment Terms: L/C, D/A, D/P, T/T, Western Union,
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Infineon Technologies LDMOS FET 65V 2.14GHz 15.8dB Gain Transistor for RF Power Amplification

RF Mosfet 30 V 1.6 A 2.14GHz 15.8dB 50W H-37260-2
Quality Infineon Technologies LDMOS FET 65V 2.14GHz 15.8dB Gain Transistor for RF Power Amplification for sale
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