RF Power Transistors MRF422 RF POWER TRANSISTORS NPN SILICON MOTOROLA RF Power Transistors
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MRF422 is a RF POWER TRANSISTORS NPN SILICON. Part NO: MRF422 Brand: MOTOROLA Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
Mega Source Elec.Limited
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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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High Gain Performance Mosfet Power Transistor NPN Darlington TIP122 ROHS Approved
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...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors......
Shenzhen ATFU Electronics Technology ltd
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600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
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TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
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...NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor......
ShenZhen QingFengYuan Technology Co.,Ltd.
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High Gain Performance Mosfet Power Transistor NPN DarliCM GROUPon TIP122 ROHS Approved
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...Transistors TIP122 DarliCM GROUPon NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors......
ChongMing Group (HK) Int'l Co., Ltd
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2SC5027 Triple Diffused NPN Power Transistor NPN Silicon Transistor 3.0PF
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...TRANSISTOR SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS * High Voltage :VCEO = 300V * Small Collector Output Capacitance :Cob=3.0pf PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 7 V Collector Current IC 100 mA Base Current IB 50 mA Collector Power......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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Transistor d2061 2Sd2061 NPN Power Transistor NPN 80V 3A 40W TO220F
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Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T
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NPN LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET
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...Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power......
Shenzhen Retechip Electronics Co., Ltd
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