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BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

Name: BSS138K N Channel 035W 022A Silicon Power MOSFET
Brand: Huixin
Price: 1 USD

BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

Categories	Low Voltage Mosfet
Brand Name:	Huixin
Model Number:	BSS138K
Certification:	ISO9001, ISO4001, IATF16949, UL
Place of Origin:	China
MOQ:	3000pcs
Price:	Negotiable
Payment Terms:	T/T, MoneyGram
Supply Ability:	1 billion pieces/ Month
Delivery Time:	4-5Weeks
Packaging Details:	3000pcs / Reel
Type:	BSS138K N-Channel
Material:	Silicon
Package:	SOT-23
Drain-Source Voltage:	50V
Continuous Drain Current:	0.22A
Power Dissipation:	0.35W
MPQ:	3000PCS
Features:	Rugged and Reliable

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Company Info.

Guangdong Huixin Electronics Technology Co., Ltd.

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BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

BSS138K N-Channel Enhancement Mode Power MOSFET

FEATURES

1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating:HBM 2300V
2. High power and current handing capability
3. Lead free product is acquired
4. Surface mount package

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

50

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

0.22

A

Drain Current-Pulsed (Note 1)

IDM

0.88

A

Maximum Power Dissipation

PD

0.35

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

50

65

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=50V,VGS=0V

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

-

±110

±500

nA

VGS=±12V,VDS=0V

-

±0.3

±10

uA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.6

1.1

1.6

V

Drain-Source On-State Resistance

RDS(ON)

VGS=5V, ID=0.2A

-

1.3

3

Ω

VGS=10V, ID=0.22A

-

1

2

Ω

Forward Transconductance

gFS

VDS=10V,ID=0.2A

0.2

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=25V,VGS=0V, F=1.0MHz

-

30

-

PF

Output Capacitance

Coss

-

15

-

PF

Reverse Transfer Capacitance

Crss

-

6

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω

-

5

nS

Turn-on Rise Time

tr

-

5

nS

Turn-Off Delay Time

td(off)

-

60

nS

Turn-Off Fall Time

tf

-

35

nS

Total Gate Charge

Qg

VDS=25V,ID=0.2A,
VGS=10V

-

2.4

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=0.22A

-

1.3

V

Diode Forward Current (Note 2)

IS

-

0.22

A

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

Product Tags:

0.22A Silicon Power MOSFET

0.35W Silicon Power MOSFET

BSS138K N Channel MOSFET

BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

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