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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: 2SC5707
Certification: new & original
Place of Origin: original factory
MOQ: 20
Price: Negotiate
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 9500
Delivery Time: 1 day
Packaging Details: Please contact me for details
Collector Cutoff Current: <= (--)0.1 µA
Emitter Cutoff Current: <= (--)0.1 µA
DC Current Gain: 200-560
Gain-Bandwidth Product: (290)330 MHz
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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching


Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash


Features

• Adoption of FBET and MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.


Specifications ( ) : 2SA2040

Absolute Maximum Ratings at Ta=25°C

ParameterSymbolConditionsRatingsUnit
Collector-to-Base VoltageVCBO--(--50)100V
Collector-to-Emitter VoltageVCES--(--50)100V
Collector-to-Emitter VoltageVCEO--(--)50V
Emitter-to-Base VoltageVEBO--(--)6V
Collector CurrentIC--(--)8A
Collector Current (Pulse)ICP--(--)11A
Base CurrentIB--(--)2A
Collector DissipationPC

--

Tc=25°C

1.0

15

W

W

Junction TemperatureTj--150°C
Storage TemperatureTstg----55 to +150°C

Electrical Characteristics at Ta=25°C

ParameterSymbolConditionsmin.Typ.max.unit
Collector Cutoff CurrentICBOVCB=(--)40V, IE=0A----(--)0.1µA
Emitter Cutoff CurrentIEBOVEB=(--)4V, IC=0A----(--)0.1µA
DC Current GainhFEVCE=(--)2V, IC=(--)500mA200--560--
Gain-Bandwidth ProductfTVCE=(--)10V, IC=(--)500mA--(290)330--MHz
Output CapacitanceCobVCB=(--)10V, f=1MHz--(50)28--pF
Collector-to-Emitter Saturation Voltage

VCE(sat)1

VCE(sat)2

IC=(--)3.5A, IB=(--)175mA

IC=(--)2A, IB=(--)40mA

--

--

(--230)160

(--240)110

(--390)240

(--400)170

mV

mV

Base-to-Emitterr Saturation VoltageVBE(sat)IC=(--)2A, IB=(--)40mA--(--)0.83(--)1.2V
Collector-to-Base Breakdown VoltageV(BR)CBOIC=(--)10µA, IE=0A(--50)100----V
Collector-to-Emitter Breakdown VoltageV(BR)CESIC=(--)100µA, RBE=0Ω(--50)100----V
Collector-to-Emitter Breakdown VoltageV(BR)CEOIC=(--)1mA, RBE=∞(--)50----V
Emitter-to-Base Breakdown VoltageV(BR)EBOIE=(--)10µA, IC=0A(--)6----V
Turn-On TimetonSee specified Test Circuit.--(40)30--ns
Storage TimetstgSee specified Test Circuit.--(225)420--ns
Fall TimetfSee specified Test Circuit.--25--ns

Package Dimensions Package Dimensions

unit : mm unit : mm

7518-003 7003-003


Switching Time Test Circuit


Quality PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching for sale
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